http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20210078664-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d51b723a2d8eb04c7a282a4cc006b70a |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02304 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 2019-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b86a74dc1c23aa564cf4c68474602f52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8e76d96ecbfd6400070c20e3f5751dde http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e362fdba0553a2172a9b25c015e6c83d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f2d34fa18869645944c5afbcdaec19b0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_76ff70ccd4238aebd28dca25cff7efaf |
| publicationDate | 2021-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20210078664-A |
| titleOfInvention | Thin film deposition method |
| abstract | In the present invention, in forming the silicon oxide thin film 21 on the surface of the substrate 1 on which the patterned photoresist 10 is formed, the source gas containing silicon is supplied to apply the source gas on the substrate 1 . a first adsorption step (S10) of adsorbing; a first purge step (S20) of supplying an inert gas to purging after the first adsorption step (S10); an activation step (S30) of supplying an inert gas activated by plasma to the substrate (1) after the first purge step (S20); a second purge step (S40) of turning off the plasma after the activation step (S30) and purging by supplying an inert gas to the substrate (1); a first reaction gas supply step (S50) of supplying an oxygen-containing gas to react with the source gas adsorbed on the substrate (1) after the second purge step (S40); After the first reaction gas supply step (S50), a pre-deposition step including a third purge step (S60) of purging by supplying an inert gas, and a source gas containing silicon is supplied on the substrate (1). a second adsorption step (S100) of adsorbing; a fourth purging step (S200) of purging by supplying an inert gas after the second adsorption step (S100); a second reaction gas supply step (S500) of supplying an oxygen-containing gas to react with the source gas adsorbed on the substrate (1) after the fourth purge step (S200); It includes a main deposition step including a fifth purge step (S600) of purging by supplying an inert gas after the second reaction gas supply step (S500), and after performing the pre-deposition step m or more, the main deposition step is n Disclosed is a thin film deposition method, characterized in that it is carried out more than once. |
| priorityDate | 2019-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.