| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C22-77
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6715
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6708
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67739
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67703
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67276
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32134
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C22-83 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-687 |
| filingDate |
2019-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9365fc730b17bc693c3a48b3df7c2fc5 |
| publicationDate |
2021-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20210076994-A |
| titleOfInvention |
Process Systems and Platforms for Wet Atomic Layer Etching Using Self-Controlling and Solubility Limiting Reactions |
| abstract |
A process system and platform for improving both microscopic and macroscopic uniformity of materials during etching are disclosed herein. This improvement can be achieved by forming and dissolving a thin self-controlling layer on the material surface using wet atomic layer etching (ALE) technology. For the etching of polycrystalline materials, this self-regulating reaction can be used to prevent this roughness of the surface during etching. Thus, as disclosed herein, the wet ALE process uses sequential self-controlled reactions to first deform the surface layer of the material and then selectively remove the strained layer. |
| priorityDate |
2018-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |