http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20210074487-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0272d70c9ba3abebfdf08dc6b96f1120 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d26ca42afa733552704b288cb59216e3 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02623 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02587 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02631 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01B5-14 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B5-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 2019-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0389fbb392d6514232ee4b4ce1c9526d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ff9e3752ca37f0b89b730884bb7a0b05 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e6701fe99fbc8a5aa3665303e81e05b4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d9f6bb60c47d69a532bc173e46ee7ce1 |
| publicationDate | 2021-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20210074487-A |
| titleOfInvention | Transparent electrode or transistor semiconductor active layer comprising organic―nonorganic hybid superlattice structure |
| abstract | The present invention relates to a transparent electrode including an organic-inorganic hybrid superlattice structure and a semiconductor active layer for a transistor including an organic-inorganic hybrid superlattice structure. The present invention relates to an organic-inorganic hybrid superlattice structure in which crystalline metal oxide layers and self-assembled organic material layers are alternately stacked in order to overcome the mechanical limitations of crystalline oxide while maintaining and improving electrical properties. It was confirmed that the ITO-based organic-inorganic hybrid superlattice structure electrode according to the present invention maintains high electrical conductivity of up to 555 S/cm under severe mechanical stress up to 300 cycles at a bending diameter of 2 mm (resistance change within 26%). This hybrid superlattice maintains compatibility in terms of surface properties and electrical performance of ITO widely applied in existing industries, and has the advantage of being able to be manufactured through a solution process with low production cost and high production efficiency. In addition, it was confirmed that the superlattice structure of the Indium-Gallium-Oxide (IGO) TFT showed mechanical flexibility and high electrical stability, and showed a high mobility of 12.9 cm 2 /Vs. |
| priorityDate | 2019-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 52.