| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4583
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4583
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-448
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2019-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d786bc2dea8f15c50971bb8618d9807a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_69ff4355441743ba0ea68147764f271c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad16abaf328e73cb460c39c8bf9edb9f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e2a428ee545a88915035a720027aae53
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a0a335c982b4ff9dc6bf07a8a25ae62
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_140714a855222e01916715d84b5a57ac |
| publicationDate |
2021-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20210039489-A |
| titleOfInvention |
Non-UV high hardness low K film deposition |
| abstract |
Embodiments described herein provide a method of forming a high hardness low-k carbon doped silicon oxide (CDO) layer by a plasma enhanced chemical vapor deposition (PECVD) process. The method includes providing a carrier gas at a carrier gas flow rate and a CDO precursor at a precursor flow rate to the process chamber. Radio frequency (RF) power is applied to the CDO precursor at a predetermined power level and a predetermined frequency. A layer of CDO is deposited on the substrate in the process chamber. |
| priorityDate |
2018-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |