| abstract |
(Task) To provide a processing method of a workpiece in which the workpiece can arrange high heat applied during etching while suppressing the enlargement of the apparatus. (Solution means) The processing method of the workpiece is 50 Pa, where negative pressure is applied to the holding surface from the suction furnace to suck and hold the workpiece on the chuck table, realize low-pressure plasma, and suction and hold the workpiece by the chuck table. The pressure in the vacuum chamber is reduced to more than 5000 Pa, the workpiece is sucked and maintained, and plasma inert gas is supplied to the workpiece, and a voltage is applied to the electrodes placed on the chuck table to cause the workpiece to be electrostatically charged at the chuck table. Adsorption is carried out, a plasma processing gas is supplied, and the workpiece is dry etched. |