| abstract |
The semiconductor device 1 comprises a semiconductor layer 40 of 10 μm≦t si ≦30 μm, a metal layer 31 made of Ag and 30 μm≦t ag <60 μm, and a metal layer 31 made of Ni and 10 μm≦t ni It has a <35 μm metal layer 30 and transistors 10 and 20, the transistors 10 and 20 have a source electrode and a gate electrode on the main surface 40a side of the semiconductor layer 40, and the metal layer 31 Silver functions as a common drain region of the transistors 10 and 20, the ratio of the long side length to the short side length of the semiconductor layer 40 is 1.73 or less, and the ratio of the area and the peripheral length of each electrode in the source electrode is 0.127. And the total area of the source electrode and the gate electrode is 2.61 mm 2 or less, the short side length of the source electrode is 0.3 mm or less, and 702<2.33×t si +10.5×t ag +8.90×t ni <943 This holds true. |