| abstract |
The plasma CVD apparatus 10 stores a vacuum vessel 21 having a space for accommodating a film formation object S, stores isocyanate silane without hydrogen, and generates an isocyanate silane gas supplied to the vacuum vessel 21. A storage tank 30 for heating the isocyanate silane so that the storage tank 30 is connected to the vacuum container 21 to supply the isocyanate silane gas generated by the storage tank 30 to the vacuum container 21. The pipe 11, a temperature controller 12 that adjusts the temperature of the pipe 11 to 83° C. or greater and 180° C. or less, the electrode 22 disposed in the vacuum container 21, and the high-frequency power It includes a power supply mechanism 23 for supplying the electrode 22. When a silicon oxide film is formed in the vacuum container 21 on the film-forming object S, the pressure of the vacuum container 21 is greater than or equal to 50 Pa and less than 500 Pa. |