| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_af4cc10d515454e59278de7445531247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_33b011e77b33662b8bf1f2ff2de7b661 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01005 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-267
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02598
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02502
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02488
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02516
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02527
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02614
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02631
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02658
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02609
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78681
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02118
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0259
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02205 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2017-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c8851529b15270e9cd1a5d3442770934
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f8b0b5bb0d52e2025713b80389d88ac
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_93db8529a45b8eeb3f935301fcb52bca
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bc283e31b6991bac48b365b15cc1224d |
| publicationDate |
2020-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20200117048-A |
| titleOfInvention |
Direct formation of hexagonal boron nitride on silicon based dielectrics |
| abstract |
A scalable process for fabricating graphene/hexagonal boron nitride (h-BN) heterostructures is disclosed herein. This process is a silicon nitride-coated silicon (Si)-coated silicon (Si) for nucleation and growth of large-area uniform and ultra-thin h-BN directly on a Si 3 N 4 /Si substrate (B/N atomic ratio = 1:1.11±0.09). 3 N 4 /Si) (BN) X H y -radical interfacing with active sites on the surface. In addition, the resulting h-BN surface and van der Waals-bonded one-molecular layer graphene benefit from the reduction in the roughness of h-BN (3.4 times) compared to Si 3 N 4 /Si. Since the reduced surface roughness leads to a reduction in surface roughness scattering and charge impurity scattering, it shows an improved intrinsic charge carrier mobility (3 times) for graphene on h-BN/Si 3 N 4 /Si. |
| priorityDate |
2016-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |