| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4efee27937b4a512f45809fed5293747
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4eaf03c0818ab4fbfc2f0ffd284a7325 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0237
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02612
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02527
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02491
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02488
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02502
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-167 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2012-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_49dec9a9b4c2eda024e41eaabeb2a9fe
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4043c3931abda5d0a2c0d12ba4313238 |
| publicationDate |
2014-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20140082811-A |
| titleOfInvention |
Direct formation of graphene on semiconductor substrates |
| abstract |
The present invention generally relates to a method for producing a graphene layer directly on the surface of a semiconductor substrate. The method includes forming a carbon-containing layer on a front surface of a semiconductor substrate and depositing a metal film on the carbon layer. The thermal cycle decomposes the carbon-containing layer, which forms graphene directly on the semiconductor substrate upon cooling. In some embodiments, the carbon source is a carbon-containing gas, and the thermal cycle causes diffusion of carbon atoms into the metal film, which upon cooling is separated and precipitated directly onto the semiconductor substrate as a graphene layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20210130831-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11276759-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200117048-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11289577-B2 |
| priorityDate |
2011-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |