| abstract |
The present invention makes it possible to form a Si segregation layer that protects the SiGe channel without damaging the SiGe channel in the manufacturing process of a semiconductor device having a SiGe channel. As a means for solving such a problem, a first step of exposing the silicon germanium layer by subjecting the semiconductor substrate with plasma treatment under the first condition to at least a silicon layer and a silicon germanium layer formed on the silicon layer, and the semiconductor substrate In a method for manufacturing a semiconductor device having a second step of segregating silicon on the surface of the exposed silicon germanium layer by performing plasma treatment under the second condition, the first condition is adjacent to the silicon germanium layer or the silicon germanium layer. A condition in which the layer to be etched can be etched, the second condition is a condition for performing hydrogen plasma treatment, and the first process and the second process are successively performed in the processing chamber of the same plasma processing apparatus. |