| abstract |
A method, apparatus, and system for depositing tensile or compressed tungsten films are described. In one aspect, a method includes providing a substrate to the chamber. The substrate has a field region and a feature recessed from the field region. Thereafter, the substrate is exposed to the organometallic tungsten precursor. The organometallic tungsten precursor not adsorbed on the substrate is removed from the chamber. The substrate is treated with a first treatment including thermal treatment or plasma treatment to form a tungsten layer on the substrate. After processing the substrate, residual gases are removed from the chamber. The tungsten layer on the substrate is treated with a second treatment including heat treatment or plasma treatment. |