| abstract |
(Problem) Preventing etching of non-etched films by passing etching gas through the pores of the porous film. (Solution means) In an etching method for etching a silicon-containing film provided on the substrate by supplying an etching gas to a substrate, the silicon-containing film, the porous film, and the non-etched film having an etching target property for the etching gas are in this order. An amine gas supply step of supplying an amine gas to an adjacent substrate to adsorb the amine to a hole wall forming a hole portion of the porous film, and etching the silicon-containing film on the substrate on which the amine is adsorbed on the hole wall. And an etching gas supply step of supplying an etching gas for the purpose. |