| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3343
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32899
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-321 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32715
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32623
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67103
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68735
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68707
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67748
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32642
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32082 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 |
| filingDate |
2020-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8ccaebfd70e9031cbb7ca67e660da8b1 |
| publicationDate |
2020-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20200089628-A |
| titleOfInvention |
Semiconductor plasma processing equipment with wafer edge plasma sheath tuning ability |
| abstract |
Embodiments of the present disclosure generally include methods and apparatuses to improve etch rate uniformity across the surface of a substrate by controlling the shape of the plasma sheath formed across the substrate, such as a semiconductor wafer, during plasma processing. Embodiments of the present disclosure will include adjustment of one or more plasma processing parameters, and/or adjustment of the configuration of process kit hardware that is very close to and/or supports the substrate during processing. Moreover, embodiments of the present disclosure may include replacing only a small number of consumable parts in the process kit hardware without venting the process chamber, while remaining parts of the process kit hardware are reused for long periods of time. will be. The replacement of consumable parts can be completed using an automated method of exchanging used parts without venting the process chamber. |
| priorityDate |
2019-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |