| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32357 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30621
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32135
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2018-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_11cdfc8f017c8e4db0c41671cf4e030c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_22bcd094ebdfa82011177aed84e9bbc8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f10c8c4ea5f462f246c67ea57c1f9ba1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c24d1256b455ba2ab6596b9d180c3e3d |
| publicationDate |
2020-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20200088218-A |
| titleOfInvention |
Anhydrous etching methods |
| abstract |
Exemplary cleaning or etching methods can include flowing a fluorine-containing precursor into a remote plasma region of the semiconductor processing chamber. The methods can include forming a plasma in a remote plasma zone to generate plasma effluents of the fluorine-containing precursor. The methods may also include flowing plasma effluents into the processing zone of the semiconductor processing chamber. The substrate can be located within a processing zone, and the substrate can include a zone of exposed oxide and a zone of exposed metal. The methods can also include providing a hydrogen-containing precursor to the treatment zone. The methods can further include removing at least a portion of the exposed oxide. |
| priorityDate |
2017-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |