| abstract |
The present technology provides a semiconductor device capable of preventing plasma induced damage, and the semiconductor device according to the present technology includes: a measurement element formed on a substrate; A test pattern structure spaced apart from the measurement element and formed on the substrate; The first impurity region connected to the test pattern structure, the second impurity region connected to the measurement element, the insulating layer positioned on the substrate between the first impurity region and the second impurity region and the conductive layer on the insulating layer It may include a protective element. |