| abstract |
The semiconductor device of the present invention includes a first electrode, and a first insulating film made of a diffusion preventing material for the first electrode and covering the periphery of the first electrode, wherein the first electrode and the first insulating film A first substrate constituting a bonding surface, a second electrode bonded to and installed on the first substrate, and a diffusion preventing material of the second electrode and the second electrode, and surrounding the second electrode A second substrate comprising a second insulating film to be covered, and forming a bonding surface to the first substrate with the second electrode and the second insulating film. |