http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200064232-A

Outgoing Links

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filingDate 2018-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e3f45c91a1f01e036c1ea84899ec4f3
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publicationDate 2020-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20200064232-A
titleOfInvention Apparatus for Depositing Thin Film and Method of Depositing The Thin Film
abstract It is a technology for a thin film deposition apparatus and method. The thin film deposition method according to the present embodiment includes supplying a source gas into a process chamber in which a processing space is formed; Supplying a reaction gas into the process chamber; And generating a plasma in the process chamber so that the source gas and the reaction gas react to deposit a thin film on a substrate, and in the reaction gas supply step, the reaction gas supplied to the process chamber The supply flow rate can be variably supplied.
priorityDate 2018-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 25.