| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a9c8be5926503f1c3cb4dbcce92afd13 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02112
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02293
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02312 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2018-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f5cdec0a26bff2ff69819930fb882bfb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ee5fd1319a42fe05734c6bf79f7d1d7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fde9ac8742ead2a6df39e03c8eceba74
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9b0ca8c387d55b0c164fe172ad47c745
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6157a36f1659015874f709835eebe9d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_34b3c0ae323071d86ac1deef3615955c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7e6236052c0c9df5952f073444c1905f |
| publicationDate |
2020-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20200046624-A |
| titleOfInvention |
MANUFACTURING METHOD OF α-Ga2O3 THIN FILM GROWN BY PULSE MODE USING HALIDE VAPOR PHASE EPITAXY GROWTH |
| abstract |
By growing the α-Ga 2 O 3 thin film in a pulse mode during epitaxial growth of the thin film form, it is possible to control the crystallinity to produce high-quality epitaxial growth, as well as to increase production yield while lowering production cost. Disclosed is a method for producing a α-Ga 2 O 3 thin film grown in a pulse mode using the HVPE growth method. A method of manufacturing an α-Ga 2 O 3 thin film grown in a pulse mode using the HVPE growth method according to the present invention includes: (a) etching a surface of a substrate; (b) pre-treating by flowing GaCl on the etched substrate; And (c) forming the α-Ga 2 O 3 thin film by growing the pre-processed substrate under conditions of a source temperature of 350 to 550 ° C. and a growth temperature of 400 to 650 ° C. while exposing the N 2 gas atmosphere; In the step (c), during the deposition, the deposition gas is characterized in that it is periodically supplied and supplied in a pulse mode that repeatedly blocks. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112941490-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112941490-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20220100196-A |
| priorityDate |
2018-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |