| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76883 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76811
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76813
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2018-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c01e9e5adec78c0354d692a821b6aaa0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9dd7e851acba4e4033e1e757f700732b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f7a7caea1ccf497674f41cdd55c12de
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d167afee76b4996967cea5c2061c50b4 |
| publicationDate |
2020-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20200044978-A |
| titleOfInvention |
Self-aligned via processes that are selectively etched |
| abstract |
To expose the contact area on the semiconductor substrate, processing methods can be performed. The methods can include selectively recessing the first metal on the semiconductor substrate relative to the exposed first dielectric material. The methods can include forming a liner over the recessed first metal and the exposed first dielectric material. The methods can include forming a second dielectric material over the liner. The methods can include forming a hard mask over selected regions of the second dielectric material. The methods may also include selectively removing the second dielectric material to expose a portion of the liner overlying the recessed first metal. |
| priorityDate |
2017-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |