| abstract |
The method of forming a semiconductor structure includes forming an array of vertical thin film transistors. The forming of the array of vertical thin film transistors includes forming a source region, forming a channel material including an oxide semiconductor material over the source region, and exposing the channel material to a dry etchant containing hydrogen bromide. Patterning the channel material into channel regions of adjacent vertical thin film transistor structures, forming a gate dielectric material on sidewalls of the channel region, forming a gate electrode material adjacent the gate dielectric material, and the And forming a drain region over the channel region. Also disclosed are related methods of forming semiconductor structures and arrays of memory cells. |