http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200012749-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 |
| filingDate | 2019-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0af0669753fdfd0f250a80274462ac79 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9fa1306048b68dc48596935bed20899b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_49e377e670307a59fc53ce97bce9ea00 |
| publicationDate | 2020-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20200012749-A |
| titleOfInvention | Etching method |
| abstract | The etching method includes a supply step, a first etching step, a stop step, and a second etching step. In the supplying step, in order to form a semiconductor element, a reducing gas and a chlorine-containing gas are supplied into a chamber in which a substrate to be processed having a structure in which a wiring layer containing Al is laminated on an oxide semiconductor is accommodated. In the first etching step, the wiring layer is etched by a plasma of a processing gas containing a mixed gas composed of a reducing gas and a chlorine-containing gas supplied into the chamber. In the stop step, when the wiring layer is etched to a predetermined thickness by the first etching step, the supply of the reducing gas into the chamber is stopped. In the second etching step, the wiring layer is further etched by the plasma of the processing gas containing the chlorine-containing gas supplied into the chamber. |
| priorityDate | 2018-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.