| abstract |
An object of this invention is to reduce the damage to a pattern in a plasma process. The plasma processing method performed by the plasma processing apparatus includes an opening forming step, a first film forming step, a second film forming step, and an etching step. In the plasma processing apparatus, in the opening forming step, the opening is formed in the first layer by etching the substrate to be treated which includes the underlying layer and the first layer formed on the underlying layer. When the plasma processing apparatus determines that the opening satisfies the predetermined condition, in the first film forming step, the first gas species is not adsorbed by forming an inhibitor on the bottom surface of the opening by chemical vapor phase growth. To form a film. The plasma processing apparatus forms a second film on the sidewall of the opening portion in the second film forming step after the formation of the first film. The plasma processing apparatus also etches the substrate through the opening in the etching step. |