| abstract |
(Problem) Provided are a method and apparatus for forming a film for hard mask that can effectively suppress the occurrence of wiggling during etching even if the etching pattern is made finer, and a method for manufacturing a semiconductor device. (Solution means) The method of forming a film for hard mask comprises the steps of preparing a substrate on which an etching target film is formed on a substrate, and the film for hard mask on the substrate, the initial film stress is a tensile stress, and the tensile stress is And forming a film while controlling the film formation parameters so as to monotonously increase from the bottom to the top of the film. |