| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_98a75c9fff239084cf3c988c59841957 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7684 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30625
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1454
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32115 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09G1-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14 |
| filingDate |
2019-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_20dd953d0829a7442bdbfe90f1c9ec72
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ceb6e30644ad05a9d076ddfff54e72f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cbc4e85e963216bd77e51338e2842080
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_524ff0b5b889ea19595d61d6a77c30ee
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f6d53f6a0cae9f6c4043bf21817ae8b0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e18b9b7c2b0f21988a7f67f435afadb |
| publicationDate |
2020-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20200010135-A |
| titleOfInvention |
Tungsten chemical mechanical polishing slurries for reduced oxide erosion |
| abstract |
The present invention relates to slurries, methods and systems that can be used for chemical mechanical planarization (CMP) of tungsten-containing semiconductor devices. Corresponding to a decrease in pH due to tungsten polishing by-products, the use of CMP slurries with additives to maintain pH above 4 can greatly weaken erosion of high density metal (eg tungsten) structures. |
| priorityDate |
2018-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |