| abstract |
The semiconductor device includes a plurality of first bonding pads disposed in a first interconnect structure on a first substrate, a first bonding layer on a first interconnect structure, and a first region of the first bonding layer—the first bonding pads. Has a first pitch-, and a plurality of second bonding pads disposed in the second region of the first bonding layer-the second region extending between the first edge and the first region of the first bonding layer, the second The bonding pads have a first pitch, the plurality of second bonding pads including a plurality of pairs of adjacent second bonding pads, wherein each individual pair of second bonding pads is connected by a first metal line . |