| abstract |
An object of the present invention is to precisely control a pattern of a semiconductor substrate. The substrate processing apparatus includes a processing apparatus including a chamber, a memory, and a controller including a processor connected to the memory. The memory stores instructions executable by the computer for controlling the processor to control the processor. The processing of the processing apparatus includes a first processing of forming a first film in a first region of a substrate in a chamber by chemical vapor deposition (CVD). The processing of the processing apparatus also includes a second processing of forming a second film in the second region of the substrate in the chamber by atomic layer deposition (ALD). In addition, the processing apparatus performs the first processing and the second processing without moving the substrate out of the chamber. |