| abstract |
Provided is a semiconductor device having good electrical characteristics. A first insulator is formed on the oxide, a second insulator is formed on the first insulator, a conductor is formed on the second insulator, an upper surface of the oxide, a side of the first insulator, a side of the second insulator, and a conductive A third insulator is formed in contact with the side surface of the sieve, and the first insulator and the second insulator are continuously formed under a reduced pressure atmosphere. |