| abstract |
Provided are compositions useful for selective removal by etching silicon-germanium-containing materials as compared to silicon-containing materials from microelectronic devices having features containing silicon-containing and silicon-germanium-containing materials on a surface, and etching The composition which will improve performance as measured by one or more of the rate or selectivity and which is adjustable to achieve the required Si: Ge removal selectivity and etch rate is selected from hydrofluoric acid, acetic acid, hydrogen peroxide, and at least one additional acid. It contains. |