http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190119660-A

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filingDate 2018-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2019-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20190119660-A
titleOfInvention Optical emission spectroscopy (OES) for remote plasma monitoring
abstract Methods and systems for etching substrates using a remote plasma are described. To etch the substrate, remotely excited etchants are formed in the remote plasma and flow through the showerhead into the substrate processing zone. Optical emission spectra are obtained from the substrate processing region directly above the substrate. Optical emission spectra can be used to determine the end point of etching, determine the etch rate, or otherwise characterize the etching process. Weak plasma may be present in the substrate processing region. Weak plasma may have a much lower intensity than remote plasma. In cases where no bias plasma is used over the substrate in the etching process, a weak plasma may be ignited near the viewport disposed near the side of the substrate processing region to characterize the etchant.
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