| abstract |
Methods are provided for depositing a contact metal layer in contact structures of a semiconductor device. In one embodiment, a method is provided for depositing a contact metal layer to form a contact structure in a semiconductor device. The method includes performing a cyclic metal deposition process to deposit a contact metal layer on a substrate, and annealing the contact metal layer disposed on the substrate. The periodic metal deposition process includes exposing a substrate to a deposition precursor gas mixture, exposing a portion of the contact metal layer to a plasma processing process to deposit a portion of the contact metal layer on the substrate, and a predetermined thickness of Exposing the substrate to the deposition precursor gas mixture and exposing a portion of the contact metal layer to a plasma treatment process until a contact metal layer is achieved. |