| abstract |
Embodiments include methods for forming a silicon nitride film on a substrate in a deposition chamber. In embodiments, the substrate comprises a silicon halide precursor absorbed on the surface of the substrate to form an absorbed layer of silicon halide, a first reactant gas comprising one or both of Ar and He and N 2 , and Ar Are sequentially exposed to a series of process gases comprising at least one of He, He, and N 2 and a second reactant gas comprising a hydrogen containing gas. In embodiments, the hydrogen containing gas comprises at least one of H 2 (molecular hydrogen), NH 3 (ammonia), N 2 H 2 (diagen), N 2 H 4 (hydrazine), and HN 3 (hydrogen azide). It includes one. Embodiments may include repeating the sequential exposure until a silicon nitride film of desired thickness is obtained. |