| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68771 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45542
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45527 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 |
| filingDate |
2018-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d30e4766986aa04f5df2db7cbc191578
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_53c543cdc537484094d5049c5391ac00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_621b2912540f8fca3cc01777dcbefbac
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c488db02fe4273427bfaa5f1a37983a0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8171b8985a82b2584167dbf4eef88b81
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7dd97a2850f4af9521a64a4b9ef672b8 |
| publicationDate |
2019-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20190096449-A |
| titleOfInvention |
Methods and apparatus for low temperature silicon nitride films |
| abstract |
Processing methods for forming the silicon nitride film can be applied to the silicon precursor, nitrogen-containing reactant and hydrogen-containing plasma at a temperature of about 250 ° C. or less to form the silicon nitride film at low etch rate without damaging the metal surface. Exposing the metal surface. |
| priorityDate |
2017-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |