| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6f932d94618d9b875e401457b33e9761 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-06 |
| filingDate |
2018-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e17beaa7713fbbe5e58544b69ccb1b4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_56d3f41d795c57d1061a4bb1c3c563f5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0c0638114fb098b1b7201449755fbe50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e0dccd5966d7f13c7ce71dda631dcda7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91f2368f6177f9b7f7da46c103daba1d |
| publicationDate |
2019-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20190090210-A |
| titleOfInvention |
Insulation layer etchant composition and method of forming pattern using the same |
| abstract |
The insulating film etchant composition of the embodiments of the present invention includes phosphoric acid, a silane compound containing a phosphoric acid-soluble group separated through a linker with silicon atoms, and an excess of water. The oxide film is passivated by the phosphoric acid-soluble group-containing silane compound and the solubility is improved, so that the etching property can be improved. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020013485-A1 |
| priorityDate |
2018-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |