| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6813f68bbadbcaae3828aa035190fede |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-2001 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32724
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32422
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32357
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31058
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate |
2017-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa28e78b33bd799173e22d9ed5f87951 |
| publicationDate |
2019-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20190077545-A |
| titleOfInvention |
Atomic layer etching process using plasma with rapid thermal activation process |
| abstract |
A process for etching a film layer on a semiconductor wafer is disclosed. The process is particularly suitable for etching carbon-containing layers such as hardmask layers, photoresist layers and other low dielectric films. According to the present disclosure, the reactive species generated from the plasma are in contact with the surface of the film layer. At the same time, the substrate or semiconductor wafer is subjected to a rapid thermal heating cycle that increases the temperature above the activation temperature of the reaction in a controlled manner. |
| priorityDate |
2016-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |