| abstract |
Various nonplanar semiconductor elements such as fin field effect transistors (finFETs), which provide an example with one or more metal rail conductors, and various methods of manufacturing such nonplanar semiconductor elements are described herein. In some situations, one or more metal rail conductors may be electrically connected to the gate, source, and / or drain regions of these various nonplanar semiconductor devices. In such a situation, one or more metal rail conductors may be used to electrically connect the gate, source and / or drain regions of various nonplanar semiconductor devices to various nonplanar semiconductor devices and / or other gate, source and / or drain regions of other semiconductor devices Lt; / RTI > However, in other situations, one or more metal rail conductors may be isolated from the gate, source and / or drain regions of these various nonplanar semiconductor devices. This isolation prevents electrical connection between the gate, source and / or drain regions of the one or more metal rail conductors and various nonplanar semiconductor devices. |