| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_517a04cc4bffc3d216b19f45c9bde10d |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate |
2017-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b9651b7b2b538d7220e91da39ca6fd33
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_14256f1f16e3129ed05fc01ee6e17e97
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_59d97019161a1489b29b266117c23de7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be5a9ab548d35c06af025f97eb82ef52 |
| publicationDate |
2019-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20190054570-A |
| titleOfInvention |
Etching composion for silicon nitride layer |
| abstract |
The present invention relates to a silicon nitride film etching composition. According to the present invention, it is possible to selectively etch the silicon nitride film without causing problems such as generation of particles affecting the characteristics of the semiconductor device and without stably changing the etch rate and etching selectivity even at a high temperature. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019198935-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3978564-A4 |
| priorityDate |
2017-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |