| abstract |
The present invention provides a method of manufacturing a semiconductor device capable of removing a sacrificial film while suppressing the occurrence of damage caused by entry of an etchant through an opening formed in a semiconductor manufacturing apparatus. A method of manufacturing a semiconductor device, comprising: forming a polymer film (6) made of a polymer having urea bonds on a substrate on which a concave portion (29) including an opening of a patterned sacrifice film (23) (29). The polymer film 6 is removed while leaving the buried polymer 6a and the sacrificial film 23 is removed in a state in which the polymer 6a is embedded in the concave portion 29. Then, The polymer is removed. |