| abstract |
Implementations of the present disclosure generally relate to methods and apparatus for epitaxial deposition on substrate surfaces. More specifically, implementations of the present disclosure generally relate to an integrated system for processing N-type metal oxide semiconductor (NMOS) devices. In one implementation, a cluster tool for processing a substrate is provided. The cluster tool includes a pre-clean chamber, an etch chamber, at least one pass through chamber, at least one gas delivery chamber, a first transfer chamber, a second transfer chamber, and at least one process chamber. The pre-clean chamber and the etch chamber are coupled to the first transfer chamber. One or more pass through chambers are disposed and coupled between the first transfer chamber and the second transfer chamber. One or more gas discharge chambers are coupled to the second transfer chamber. One or more process chambers are coupled to the second transfer chamber. |