http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190040766-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_83dffc287358331deccd774ddf93f551 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F4-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0277 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2017-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c786cc42b8e0cfcbb21db177570c6df9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9ee2a855a81764688b5524fe918a0e9f |
| publicationDate | 2019-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20190040766-A |
| titleOfInvention | Method for Etching of Palladium Thin Films |
| abstract | The present invention relates to a method of etching a palladium thin film, and more particularly, to a method and apparatus for etching a palladium thin film by applying an optimal etching process condition including a kind of an etching gas and a concentration of an etching gas to a palladium thin film, The present invention relates to a method of etching a palladium thin film capable of providing a rapid etching rate and a high anisotropic etching profile as well as mitigating plasma damage to the metal oxide semiconductor layer under the palladium thin film without residues. |
| priorityDate | 2017-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.