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filingDate 2018-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_11b08e355c783d74ef69c1a9253940cf
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publicationDate 2019-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20190035512-A
titleOfInvention Method of manufacturing semiconductor device, substrate processing apparatus, and program
abstract The present invention improves step coverage of a film formed on a substrate. A first chemical bond which is cleaved by thermal energy at a first temperature and a second chemical bond which is cleaved by thermal energy at a second temperature which is lower than the first temperature, The step of forming the first layer is performed a predetermined number of times by supplying the halogen-free raw material having the ratio of the number of the first chemical bonds to the number of the first chemical bonds to the substrate at a temperature higher than the second temperature and lower than the first temperature.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20210027191-A
priorityDate 2017-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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