| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
| filingDate |
2018-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_686713ff398ffc6d38cee2470068fc6e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_987a21a9be4a4262767fc1486e8e2a91 |
| publicationDate |
2019-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20190030181-A |
| titleOfInvention |
Selective nitride etching method for self-aligned multiple patterning |
| abstract |
The etching method will be described. The method includes forming a first chemical mixture by plasma excitation of a first process gas containing an inert gas and at least one additional gas selected from the group consisting of He and H 2 , And exposing the first material on the substrate to the first chemical mixture for modification. The method then includes forming a second chemical mixture by plasma excitation of a second process gas containing an inert gas and an additional gas containing C, H, and F, and introducing a silicon nitride And exposing the first material on the substrate to a second plasma excited process gas to selectively etch the containing first material and remove the modified first material from the first area of the substrate. |
| priorityDate |
2017-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |