| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_985f1bf0df4204078e687f8417dc5871 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate |
2017-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ca9ee52a99354fb6fc0bb44362248889
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_961fb0b52a310d4ad0e3d009aea1ac82 |
| publicationDate |
2019-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20190021794-A |
| titleOfInvention |
Substrate treating apparatus and substrate treating method |
| abstract |
The present invention relates to a substrate processing apparatus and a substrate processing method. According to an embodiment of the present invention, there is provided a method of processing a substrate, comprising: selectively etching a silicon nitride film for polysilicon, supplying water vapor into a chamber provided with a substrate to form a vapor layer around the substrate; And an etching step of selectively etching the silicon nitride film by supplying a process gas containing fluorine into the chamber after the step of forming the water vapor layer. |
| priorityDate |
2017-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |