| abstract |
The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, the substrate in the reaction space is contacted with a pulse of a silicon precursor and a pulse of a dopant precursor, whereby the silicon precursor and the dopant precursor are adsorbed to the substrate surface. An oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor into doped silicon oxide. |