http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190013882-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31122 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2017-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d1ea531cb5bf19b81c5c5198e98a0044 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e1c0098a996e0471dd16c1281b210d88 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d334c1b1911b61b2017f802c407fbbb9 |
| publicationDate | 2019-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20190013882-A |
| titleOfInvention | Atomic layer etch systems and methods |
| abstract | The processing apparatus includes a processing chamber having a substrate holder; A first gas delivery system configured to deliver a first source gas into the processing chamber; A second gas delivery system configured to deliver a second source gas into the processing chamber; Energy activation system; And a processing circuit. The processing circuitry controls the first processing parameters for delivery of the first source gas, controls the second processing parameters for delivery of the second source gas, and etches the atomic layer from the surface of the one or more components in the absence of the plasma To control the process chamber parameters and energy activation system parameters that cause the reaction of the first source gas and the second source gas with the surface of the one or more components in the process chamber to remove one or more reaction gases from the process chamber And to control the vacuum system parameters. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102420097-B1 |
| priorityDate | 2016-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.