| abstract |
A film for forming a protective film and a composite sheet for forming a protective film capable of preventing a semiconductor chip from being charged are provided. Wherein the film for forming a protective film has a surface resistivity of 10 < 12 > OMEGA .cm or less when irradiated with energy rays and cured. The protective film-forming film preferably contains an antistatic agent, and the antistatic agent is preferably selected from the group consisting of an anionic surfactant-based antistatic agent, a cationic surfactant-based antistatic agent, a nonionic surfactant-based antistatic agent, an amphoteric surfactant At least one member selected from the group consisting of an antistatic agent, an antistatic agent, and a nonionic surfactant-based antistatic agent. |