| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67075 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02129
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6708
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67253
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32134 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2017-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d5736b11091ae73aa26b3cbe895fd79b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a472df258f8bd967ba3e82eb83a5a174
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b6ac15b6db6cb8cbd66d899fa3f64e95
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f02cfea448c0304306cad7e6421662b9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2343f7f31aa1d1e72b025487b3400c74 |
| publicationDate |
2018-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20180121795-A |
| titleOfInvention |
Method and apparatus for treating nitride structures without deposition of silica |
| abstract |
Techniques are provided to remove the growth of colloidal silica deposits on the surface of high aspect ratio structures during the silicon nitride etch step. A highly selective over etch step is used to remove the deposited colloidal silica. The disclosed technique uses phosphoric acid to remove silicon nitride from structures having silicon nitride formed within narrow gaps or trench structures with high aspect ratios that cause the formation of colloidal silica deposits at the surface of narrow gaps or trenches through hydrolysis reactions . A second etching step is used wherein the hydrolysis reaction forming the colloidal silica sediments is reversible and the equilibrium is reversed by the present lower silica concentration in the nearby phosphoric acid due to the depletion of silicon nitride, The silica is again dissolved in the solution. |
| priorityDate |
2016-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |