| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-47573
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78648
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42384
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-47635
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42372
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-465 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-465 |
| filingDate |
2016-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b44f76e49b36dd2909eb36bf02900988
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d81266c9f5821a53bb7cad525277661b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_62bda92ebb6b753395cadcd2de2ad402
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0c79bf07b19ee9a99a2960232df91e91
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_90a374176e49b6949d98fca23538a820 |
| publicationDate |
2018-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20180042280-A |
| titleOfInvention |
Semiconductor device and manufacturing method thereof |
| abstract |
Providing a fine transistor. Thereby providing a transistor with low parasitic capacitance. Thereby providing a transistor having high frequency characteristics. Thereby providing a transistor having a high on-state current. And a semiconductor device including the transistor. A semiconductor device having a high degree of integration is provided. The semiconductor device includes an oxide semiconductor; A second insulator; A second conductor; A third conductor; A fourth conductor; A fifth conductor; A first conductor and a first insulator embedded in openings formed in the second insulator, the second conductor, the third conductor, the fourth conductor, and the fifth conductor; A side surface and a bottom surface of the second conductor are in contact with the fourth conductor; And the side and bottom of the third conductor are in contact with the fifth conductor. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11177176-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11056491-B2 |
| priorityDate |
2015-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |