| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ed62b7551998e54b35784cdbbb2778d5 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67313
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67778 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45578
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67017
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67109
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45546
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45563
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45548
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45527
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45531 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2017-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8c180d0d987b9b534deadb7b0cb9cc28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_464fe8a56d48e8e24dcf7bbfeaf31f97
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_06d24d08fa3d73a47df33d04cb19c9ca
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_900d98d7d7a42a889dcd3a48a2eebd5f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_73318a510569d301679166a828cb6450 |
| publicationDate |
2018-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20180030384-A |
| titleOfInvention |
Method of manufacturing semiconductor device, substrate processing apparatus, and program |
| abstract |
Plane film thickness distribution of the film formed on the substrate is controlled. A step of supplying a raw material from a first nozzle to a substrate and discharging the raw material from an exhaust port; a step of supplying a first reactant to a substrate from a second nozzle arranged farther from the exhaust port than the first nozzle, A step of forming a film on a substrate by performing a predetermined number of cycles of performing a process of supplying a second reactant from a third nozzle disposed closer to the exhaust port than the second nozzle with respect to the substrate and discharging the exhaust from the exhaust port, By controlling the balance between the flow rate of the inert gas supplied from the second nozzle, the flow rate of the inert gas supplied from the third nozzle, and the flow rate of the inert gas supplied from the first nozzle at the time of supplying the raw material, In-plane film thickness distribution of the film to be processed. |
| priorityDate |
2016-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |