http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170111087-A

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filingDate 2016-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5377ad809cf7e4a7b59f8b8f494b6404
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_430fe6f6310944717d373fec9d7d8ccd
publicationDate 2017-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20170111087-A
titleOfInvention Composition for Etching Indium Oxide Layer
abstract The present invention relates to an etching composition for an indium oxide film, which comprises nitric acid, a cyclic amine compound, a fluorine-containing compound and a hydroxylamine compound, wherein the hydroxylamine compound is contained in an amount of 0.1 to 5.0% Lt; / RTI &gt; The etching composition according to the present invention can improve the driving characteristics of the liquid crystal display device by maintaining the etching uniformity even when the number of treatments is increased at the time of etching the indium oxide film used as the pixel electrode of the array substrate for a liquid crystal display device.
priorityDate 2016-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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