| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01074 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2017-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_599c7ed9e72519c82a74270bd0d6157f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b27f061ca5477550bbe6bec986cf2b6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9ebf2a34e42c2aea6c737565627d10e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4e2ed342294e7a9a49f21b31a30088e8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa840869d747f91ec79e73eb77fe025d |
| publicationDate |
2017-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20170106927-A |
| titleOfInvention |
Method for etching features in dielectric layers |
| abstract |
There is provided a method for etching features of a silicon oxide containing etch layer disposed under a patterned mask in a chamber. An etching gas containing a tungsten-containing gas flows into the chamber. The etching gas containing the tungsten-containing gas is formed by plasma. The silicon oxide etch layer is exposed to a plasma formed from an etching gas comprising a tungsten containing gas. The features are etched in the silicon oxide etch layer during exposure to a plasma formed from an etch gas comprising a tungsten containing gas. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200054962-A |
| priorityDate |
2016-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |